Asif Khan

Asif Khan is an Associate Professor in the School of Electrical and Computer Engineering with a courtesy appointment in the School of Materials Science and Engineering at Georgia Institute of Technology. Dr. Khan’s research focuses on ferroelectric devices that address the challenges faced by the semiconductor industry due to the end of transistor miniaturization. His work led to the first experimental proof-of-concept demonstration of the ferroelecric negative capacitance, which can reduce the power dissipation in transistors. His recent work includes the exploration of the reliability of ferroelectric field-effect transistors and metrology of ferroelectric devices and materials. Dr Khan’s notable awards include the DARPA Young Faculty Award (2021), the NSF CAREER award (2021), the Intel Rising Star award (2020), the Qualcomm Innovation Fellowship (2012), TSMC Outstanding Student Research Award (2011) and University Gold Medal from Bangladesh University of Engineering and Technology (2011). Dr. Khan received the Class of 1934 CIOS Honor Roll award for excellence in teaching a graduate course on Quantum Computing Devices and Hardware in Fall 2020. He is presently serving as an editor at IEEE Electron Device Letters. In the past, he has also worked as an associate editor for IEEE Access, and as a technical program committee member for various conferences including IEEE International Electron Devices Meeting (IEDM) and Design Automation Conference (DAC), among others.