Session:

Ordinary Czochralski silicon (CZ-Si) is known to be inferior in radiative recombination at the bandgap. Interfacing CZ-Si with sol-gel based silica coatings improves the bandgap emission significantly by introducing random strain fields; such results have been reported in several publications and presentations in the literature. In all previous work, the emission band can be modeled by a combination of uncorrelated electron-hole and phonon three particle process. In this work, we report an enhancement in carrier recombination from p-Si photoluminescence that is unorthodoxly dominated by excitonic carrier recombination. The nano-region carrier-confinement results in photons of energy hn with intensity of spectral form e^1/2associated with correlated carrier recombination, where e = hn - E_B + E_exc + E_TO, E_B is the band gap, E_exc is the exciton binding energy, and E_TO is the transverse optical phonon energy.

Co-Author(s): El Mostafa Benchafia (Khalifa University of Science and Technology), Ali Abdulla (Khalifa University of Science and Technology), Anthony Fiory (Integron Solutions LLC), Nuggehalli Ravindra (Integron Solutions LLC)

Sufian Abedrabbo

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