Tuning of Band Gap in Type-I Clathrate Ba8NixZnyGe46-x-y-zSnz for ZT~1
Apr 2, 2013 10:30am ‐ Apr 2, 2013 10:45am
Identification: H1.11
Thiopyrylium-Terminated Polymethines: Promising Organic Materials for All-Optical Signal Processing in Integrated Devices
Apr 2, 2013 10:30am ‐ Apr 2, 2013 10:45am
Identification: HH1.07
The Synthesis and Characterization of Nano-Hydroxyapatite (nHAP)-g-poly (Lactide-co-glycolide)-g-collagen Polymer for Tissue Engineering Scaffolds
Apr 2, 2013 10:30am ‐ Apr 2, 2013 10:45am
Identification: NN2.04
Electro-Optical Properties of Ba Doped SrCu2O2 Obtained from Strontium-Copper Oxide Films Deposited by Metalorganic Chemical Vapor Deposition
Apr 2, 2013 10:30am ‐ Apr 2, 2013 10:45am
Identification: S1.08
First-Principles Study of Carbon Nanotube/Metal Contact Resistance: Anomalous Length Scaling and Intrinsically Low Resistance Mediated by Topological Defects
Apr 2, 2013 10:30am ‐ Apr 2, 2013 10:45am
Identification: T1.09-AA1.09
Influence of WTi Thin Films Thickness and Structure on Electrical Conductivity
Apr 2, 2013 10:45am ‐ Apr 2, 2013 11:00am
Identification: BBB2.04
Single-Polymer, Bistable Resistive Memory Devices on Flexible Substrates
Apr 2, 2013 10:45am ‐ Apr 2, 2013 11:00am
Identification: DD2.05
Electrochemically Aligned Collagen-Nanoparticle Composite Fibers Promote the Proliferation and Tenogeneic Differentiation of Adipose-Dereived Stem Cells
Apr 2, 2013 10:45am ‐ Apr 2, 2013 11:00am
Identification: NN2.05
Graphene p-type Silicon Metal-Semiconductor-Metal Photodetectors
Apr 2, 2013 10:45am ‐ Apr 2, 2013 11:00am
Identification: T1.10-AA1.10
"Empowering Plasmonics and Metamaterials Technology with New Material Platforms" - the 2013 MRS Outstanding Young Investigator Award talk
Apr 2, 2013 11:15am ‐ Apr 2, 2013 12:00pm
In recent years, plasmonics and metamaterials have seen an explosion of novel ideas and device designs. However, transforming these concepts into practical devices requires a significant amount of effort.
The constituent materials in these devices play a crucial role in realizing useful and efficient devices. Similar to the way silicon shaped the nanoelectronics field, efforts toward finding the best set of materials for plasmonic and metamaterial devices could revolutionize the field of nanophotonics. As a potential solution, alternative plasmonic materials have recently gained significant attention. Metals, despite being essential components of plasmonic and metamaterial devices, pose many technological challenges toward the realization of practical devices—primarily due to their high optical loss, integration and fabrication limitations. Hence, searching for an alternative to metals
is vital to the success of future nanophotonic devices. In this talk, I will provide a brief survey of recent developments in the pursuit of better
plasmonic materials, and discuss several classes of materials including doped semiconductor oxides and ceramics as potential alternatives to metals that provide low intrinsic loss, tunability and compatibility with standard semiconductor fabrication processes.
The constituent materials in these devices play a crucial role in realizing useful and efficient devices. Similar to the way silicon shaped the nanoelectronics field, efforts toward finding the best set of materials for plasmonic and metamaterial devices could revolutionize the field of nanophotonics. As a potential solution, alternative plasmonic materials have recently gained significant attention. Metals, despite being essential components of plasmonic and metamaterial devices, pose many technological challenges toward the realization of practical devices—primarily due to their high optical loss, integration and fabrication limitations. Hence, searching for an alternative to metals
is vital to the success of future nanophotonic devices. In this talk, I will provide a brief survey of recent developments in the pursuit of better
plasmonic materials, and discuss several classes of materials including doped semiconductor oxides and ceramics as potential alternatives to metals that provide low intrinsic loss, tunability and compatibility with standard semiconductor fabrication processes.