Presented by CAMECA
Providing a unique combination of extremely high sensitivity with detection limits down to parts per billion levels, Dynamic Secondary Ion Mass Spectrometry has long been a leading technique for R&D and process control of novel semiconductors.
The webinar will review instrumental solutions towards a broad array of IC applications, from deep to ultra-shallow implant depth profiling in Si-based semiconductors to compositional analysis of thin multilayers in patterned wafer pads, optoelectronics, 2D and non-planar 3D structures...
Presented by CAMECA
