To view this presentation:

  • If you have an MRS account, click the Login button above.
  • New to MRS?  Create a free account here



  0       0

2014 MRS Spring Meeting


OO20.05 - Growth of Graphene Oxide


Apr 25, 2014 2:30pm ‐ Apr 25, 2014 2:45pm

Description

Reduced Graphene Oxide (RGO) has the advantage of an aqueous and industrial-scalable production route. However, the main problem that prevents the use of RGO in electronics is the high deviation in electrical resistivity between chips. The novel growth of RGO can bridge the gaps in-between existing flakes and thus reduce the electrical resistivity standard deviation from 80.5% to 16.5%. The average resistivity of the treated RGO of ~3.8nm thickness were 200Ω/square The study uses an atmospheric-pressure chemical vapour deposition (CVD) system with hydrogen and argon gas bubbling through ethanol before entering the furnace. With a treatment of 2 hours, 100% of the silicon dioxide substrate was covered with reduced GO from an initial 65% coverage. This technology could enable RGO to be used in practical electronic devices and molecular sensors.

Speaker(s):

  • Jingfeng Huang, Nanyang Technological University, Loughborough University, Nanyang Technological University

You must be logged in and own this session in order to post comments.

Print Certificate
Review Answers
Print Transcript
Completed on: token-completed_on
Review Answers
Please select the appropriate credit type:
/
test_id: 
credits: 
completed on: 
rendered in: 
* - Indicates answer is required.
token-content

token-speaker-name
token-index
token-content
token-index
token-content
token-index
token-content
token-index
token-content
token-index
token-content
token-index
token-content
/
/
token-index
token-content
token-index
token-content