To view this presentation:

  • If you have an MRS account, click the Login button above.
  • New to MRS?  Create a free account here



  0       0

2016 MRS Fall Meeting


Tutorial EM10.1 - Memristive Materials and Neuromorphic Devices, Part 1


Nov 27, 2016 1:30pm ‐ Nov 27, 2016 5:30pm

Description

Due to the technological limitation of flash memory, a significant number of new nonvolatile memories are now being proposed. The tutorial covers the fundamental physics behind the emerging nonvolatile memories. Resistive switching memory (ReRAM) technologies (based on non-phase change materials) and its application will be the focus of this tutorial. Presentations by two leading researchers will cover the fundamental background of devices.


Themis Prodromakis will review the new materials and the physical properties required for this type of memory cells. The link between the resistance-switching mechanisms and the realization of memristor will be included in this segment, along with the state of the art of this technology.

Speaker(s):

You must be logged in and own this session in order to post comments.

Print Certificate
Review Answers
Print Transcript
Completed on: token-completed_on
Review Answers
Please select the appropriate credit type:
/
test_id: 
credits: 
completed on: 
rendered in: 
* - Indicates answer is required.
token-content

token-speaker-name
token-index
token-content
token-index
token-content
token-index
token-content
token-index
token-content
token-index
token-content
token-index
token-content
/
/
token-index
token-content
token-index
token-content