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Dynamic SIMS for Semiconductors – From compositional analysis of optoelectronics and 2D devices to implant depth-profiling of advanced Si-based structures

Sep 15, 2021 9:00am ‐ Sep 15, 2021 10:00am


Providing a unique combination of extremely high sensitivity with detection limits down to parts per billion levels, Dynamic Secondary Ion Mass Spectrometry has long been a leading technique for R&D and process control of novel semiconductors.

The webinar will review instrumental solutions towards a broad array of IC applications, from deep to ultra-shallow implant depth profiling in Si-based semiconductors to compositional analysis of thin multilayers in patterned wafer pads, optoelectronics, 2D and non-planar 3D structures...

Presented by CAMECA




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Babu Dayal Padullaparthi
9/16/21 10:32 am

Dr. Pawel mastered SIMS and showed high quality results. I have been in VCSEL academics and Industry for 16+ years and studied extensively SIMS profiles of 100's of VCSEL samples. I never saw such perfect dopant profiles across 10+ um VCSEL samples. Obviously MRS is fortunate to bring his as SIMS expert and I am also happy to include his full VCSEL dopant profile (slide-14) in our to be published book 'VCSEL Industry: Communication and Sensing' from Wiley-IEEE press in Nov/Dec-2021. Thanks. Babu Dayal/Hong Kong.