Sponsored by American Elements

The need for new memory with non-volatility and low power-consuming performance is rapidly increasing. In both emerging and current memories, material innovation is of central importance. In the May, 2018 issue of MRS Bulletin, the recent improvements in this field are reviewed, especially emerging and novel materials for disruptive memory concepts. Progress in scanning probe-based memory devices is also described.

The talks in this webinar expanded upon the MRS Bulletin issue, and attendees were able to interact—in real time—with the webinar presenters.

Talk Presentations:

Ferroelectric HfO2 for FeRAM and Ferroelectric Field Effect Transistor
Uwe Schroeder, NaMLab gGmbH
Talk begins at 12:22
Non-Ionic Resistance Switching Memory
Yang Lu, University of Pennsylvania
Talk begins at 43:28
Materials for Spin-Transfer-Torque Magnetic Random Access Memories (STT-MRAM)
Guohan Hu, IBM TJ Watson Research Center
Talk begins at 54:21

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Guohan Hu

IBM T J Watson Research Center

Appearances