Uwe Schroeder received the Ph.D. degree from the University of Bonn, Bonn, Germany, including a research visit at UC, Berkeley. He was with the University of Chicago, Chicago, IL, as a Postdoctoral Researcher. In 1997, he joined Infineon, formerly Siemens Semiconductor, for DRAM capacitor development in the DRAM Development Alliance with IBM and Toshiba in Hopewell Junction, NY, before transferring to Infineon’s Memory Development Center, Dresden, Germany, in 2000. Here, he continued the research on high-k dielectric and its integration into DRAM capacitors. In 2009, he moved to Nanoelectronic Materials Laboratory gGmbH, Dresden, and pursued his work on high-k dielectrics and ferroelectric HfO2 layers in semiconductor devices. He is the (co-)author of more than 150 papers and conference contributions and is the holder of more than 30 patents.